0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

Naoki Harada; Tamio Saito; Hideyuki Oikawa; Yoji Ohashi; Yuji Awano; Masayuki Abe; Kohki Hikosaka

0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

Naoki Harada, Tamio Saito, Hideyuki Oikawa, Yoji Ohashi, Yuji Awano, Masayuki Abe, Kohki Hikosaka

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

Original language	English
Pages (from-to)	876-879
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E81-C
Issue number	6
Publication status	Published - 1998
Externally published	Yes

Keywords

HEMT
Ingap
Low noise amplifier
MMIC
Nun-wave

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications",

abstract = "This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.",

keywords = "HEMT, Ingap, Low noise amplifier, MMIC, Nun-wave",

author = "Naoki Harada and Tamio Saito and Hideyuki Oikawa and Yoji Ohashi and Yuji Awano and Masayuki Abe and Kohki Hikosaka",

year = "1998",

language = "English",

volume = "E81-C",

pages = "876--879",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "6",

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TY - JOUR

T1 - 0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

AU - Harada, Naoki

AU - Saito, Tamio

AU - Oikawa, Hideyuki

AU - Ohashi, Yoji

AU - Awano, Yuji

AU - Abe, Masayuki

AU - Hikosaka, Kohki

PY - 1998

Y1 - 1998

N2 - This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

AB - This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

KW - HEMT

KW - Ingap

KW - Low noise amplifier

KW - MMIC

KW - Nun-wave

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M3 - Article

AN - SCOPUS:0032094032

SN - 0916-8524

VL - E81-C

SP - 876

EP - 879

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 6

ER -

0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

Abstract

Keywords

ASJC Scopus subject areas

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