TY - JOUR
T1 - 1=f noise characteristics of fin-type field-effect transistors in saturation region
AU - Sakai, Hideo
AU - O'uchi, Shin Ichi
AU - Endo, Kazuhiko
AU - Matsukawa, Takashi
AU - Liu, Yongxun
AU - Ishikawa, Yuki
AU - Tsukada, Junichi
AU - Nakagawa, Tadashi
AU - Sekigawa, Toshihiro
AU - Koike, Hanpei
AU - Masahara, Meishoku
AU - Ishikuro, Hiroki
PY - 2013/4
Y1 - 2013/4
N2 - In this work, we measured 1=f noise of independent-double-gate-(IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate-(CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (Id). First, we measured relationship between characteristic of the normalized 1=f noise by Id (SId =I2 d ) and characteristic of Id. Both the SId =I2 d of IDG-and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1=f noise and vertical electric field (Ei) of surface of gate oxide film. As a result we could not definitely see a large margin of 1=f noise between CDG-and IDG-modes from Ei. This work also discovered that 1=f noise was greatly influenced by Id density.
AB - In this work, we measured 1=f noise of independent-double-gate-(IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate-(CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (Id). First, we measured relationship between characteristic of the normalized 1=f noise by Id (SId =I2 d ) and characteristic of Id. Both the SId =I2 d of IDG-and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1=f noise and vertical electric field (Ei) of surface of gate oxide film. As a result we could not definitely see a large margin of 1=f noise between CDG-and IDG-modes from Ei. This work also discovered that 1=f noise was greatly influenced by Id density.
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U2 - 10.7567/JJAP.52.04CC23
DO - 10.7567/JJAP.52.04CC23
M3 - Article
AN - SCOPUS:84880847764
SN - 0021-4922
VL - 52
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04CC23
ER -