200nm-pitched, Superconducting Nb Interconnects for Cryo-CMOS Application

N. Iguchi, H. Numata, M. Tanaka, K. Okamoto, T. Tanaka, K. Uchida, H. Ishikuro, T. Sakamoto, M. Tada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 200nm-pitched, superconducting niobium (Nb) interconnects with TiN protecting layer are fabricated on a 300-mm wafer for cryo-CMOS used in Quantum State Controller (QSC) application. The developed Nb interconnects show superior superconductivity with a Tc of 7.8 K and a record-high Jc of 64MA/cm2 at 4.2 K, which is high enough to local interconnects used in a cryo-CMOS circuit. For the first time, the SPICE simulation, using a 65nm-node cryogenic (4K) PDK with a technology file including Nb superconducting interconnects, estimates 40% improvement in signal delay in a typical use case. This result indicates that the power consumption in cryogenic CMOS operation can be reduced by the superconducting interconnects, as the operating voltage can be lowered while maintaining the same operational speed as that with the Cu interconnects.

Original languageEnglish
Title of host publication2024 IEEE International Interconnect Technology Conference, IITC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350385175
DOIs
Publication statusPublished - 2024
Event2024 IEEE International Interconnect Technology Conference, IITC 2024 - San Jose, United States
Duration: 2024 Jun 32024 Jun 6

Publication series

Name2024 IEEE International Interconnect Technology Conference, IITC 2024

Conference

Conference2024 IEEE International Interconnect Technology Conference, IITC 2024
Country/TerritoryUnited States
CitySan Jose
Period24/6/324/6/6

Keywords

  • BEOL
  • Nb
  • Tc
  • cryo-CMOS
  • interconnect
  • line resistance
  • quantum computing
  • superconductor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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