320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM

Naoaki Yamanaka; Kouichi Genda; Hideki Fukuda; Tohru Kishimoto

doi:10.1109/96.365493

320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM

Naoaki Yamanaka, Kouichi Genda, Hideki Fukuda, Tohru Kishimoto

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.

Original language	English
Pages (from-to)	83-91
Number of pages	9
Journal	IEEE Transactions on Components Packaging and Manufacturing Technology Part B
Volume	18
Issue number	1
DOIs	https://doi.org/10.1109/96.365493
Publication status	Published - 1995 Feb
Externally published	Yes

Keywords

ATM
B-ISDN
MCM
copper-prolyimide

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/96.365493

Cite this

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title = "320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM",

abstract = "This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.",

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AU - Fukuda, Hideki

AU - Kishimoto, Tohru

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AB - This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.

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KW - copper-prolyimide

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320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM

Abstract

Keywords

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