A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Naoaki Yamanaka; Tohru Takada

doi:10.1109/68.43358

A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Naoaki Yamanaka, Tohru Takada

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.

Original language	English
Pages (from-to)	310-312
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	1
Issue number	10
DOIs	https://doi.org/10.1109/68.43358
Publication status	Published - 1989 Oct
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.43358

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abstract = "A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.",

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AB - A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.

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A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Abstract

ASJC Scopus subject areas

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