TY - GEN
T1 - A 1Tb/s 3W inductive-coupling transceiver for inter-chip clock and data link
AU - Miura, Noriyuki
AU - Mizoguchi, Daisuke
AU - Inoue, Mari
AU - Niitsu, Kiichi
AU - Nakagawa, Yoshihiro
AU - Tago, Masamoto
AU - Fukaishi, Muneo
AU - Sakurai, Takayasu
AU - Kuroda, Tadahiro
PY - 2006
Y1 - 2006
N2 - A 1Tb/s 3W inter-chip transceiver transmits clock and data by inductive coupling at a clock rate of 1GHz and data rate of 1Gb/s per channel. 1024 data transceivers are arranged with a pitch of 30μm. The total layout area is 2mm2 in 0.18μm CMOS and the chip thickness is 10μm. 4-phase TDMA reduces crosstalk and the BER is <10-12. Bi-phase modulation is used to improve noise immunity, reducing power in the transceiver.
AB - A 1Tb/s 3W inter-chip transceiver transmits clock and data by inductive coupling at a clock rate of 1GHz and data rate of 1Gb/s per channel. 1024 data transceivers are arranged with a pitch of 30μm. The total layout area is 2mm2 in 0.18μm CMOS and the chip thickness is 10μm. 4-phase TDMA reduces crosstalk and the BER is <10-12. Bi-phase modulation is used to improve noise immunity, reducing power in the transceiver.
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M3 - Conference contribution
AN - SCOPUS:33846207670
SN - 1424400791
SN - 9781424400799
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 424+417
BT - 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
T2 - 2006 IEEE International Solid-State Circuits Conference, ISSCC
Y2 - 6 February 2006 through 9 February 2006
ER -