A 2.2 gbit/s si bipolar 8 × 8 crosspoint switching LSI

A high‐speed 8 × 8 space‐division switching LSI has been developed for video and HDTV switching and broadcasting applications in the future B‐ISDN. The LSI employs a new circuit design and super self‐aligned process technology (SST−1A), and is switched successfully with a bit error rate of less than 10⁻⁹ at 2.5 Gbit/s using a 2⁹−1 pseudorandom NRZ sequence. Pulse jitter has been limited to less than 70 ps at 2.2 Gbit/s by utilizing a small internal voltage swing (225 mV) employing a differential CML cell. The LSI has an ECL‐compatible interface, −4.0 V and −2.0 V power supply voltages, and power dissipation of less than 997 mW. High‐speed address control memories (ACMs) are integrated mono‐lithically into the LSI, which can operate both synchronously and asynchronously. Using several of these LSIs, a three‐stage switching network prototype system has been demonstrated. This network brings us closer to realizing a large‐scale, gigabit‐order, high‐speed switching network for B‐ISDN.