A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

T. Nishikawa; M. Takahashi; M. Hamada; T. Takayanagi; H. Arakida; N. Machida; H. Yamamoto; T. Fujiyoshi; Y. Matsumoto; O. Yamagishi; T. Samata; A. Asano; T. Terazawa; K. Ohmori; J. Shirakura; Y. Watanabe; H. Nakamura; S. Minami; T. Kuroda; T. Furuyama

A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

T. Nishikawa, M. Takahashi, M. Hamada, T. Takayanagi, H. Arakida, N. Machida, H. Yamamoto, T. Fujiyoshi, Y. Matsumoto, O. Yamagishi, T. Samata, A. Asano, T. Terazawa, K. Ohmori, J. Shirakura, Y. Watanabe, H. Nakamura, S. Minami, T. Kuroda, T. Furuyama

Research output: Contribution to journal › Conference article › peer-review

56 Citations (Scopus)

Abstract

The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.

Original language	English
Pages (from-to)	230-231
Number of pages	2
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication status	Published - 2000
Externally published	Yes
Event	2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States Duration: 2000 Feb 7 → 2000 Feb 9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Nishikawa, T., Takahashi, M., Hamada, M., Takayanagi, T., Arakida, H., Machida, N., Yamamoto, H., Fujiyoshi, T., Matsumoto, Y., Yamagishi, O., Samata, T., Asano, A., Terazawa, T., Ohmori, K., Shirakura, J., Watanabe, Y., Nakamura, H., Minami, S., Kuroda, T., & Furuyama, T. (2000). A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 230-231.

Nishikawa, T, Takahashi, M, Hamada, M, Takayanagi, T, Arakida, H, Machida, N, Yamamoto, H, Fujiyoshi, T, Matsumoto, Y, Yamagishi, O, Samata, T, Asano, A, Terazawa, T, Ohmori, K, Shirakura, J, Watanabe, Y, Nakamura, H, Minami, S, Kuroda, T & Furuyama, T 2000, 'A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM', Digest of Technical Papers - IEEE International Solid-State Circuits Conference, pp. 230-231.

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title = "A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM",

abstract = "The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.",

author = "T. Nishikawa and M. Takahashi and M. Hamada and T. Takayanagi and H. Arakida and N. Machida and H. Yamamoto and T. Fujiyoshi and Y. Matsumoto and O. Yamagishi and T. Samata and A. Asano and T. Terazawa and K. Ohmori and J. Shirakura and Y. Watanabe and H. Nakamura and S. Minami and T. Kuroda and T. Furuyama",

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language = "English",

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journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

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note = "2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC ; Conference date: 07-02-2000 Through 09-02-2000",

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T1 - A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

AU - Nishikawa, T.

AU - Takahashi, M.

AU - Hamada, M.

AU - Takayanagi, T.

AU - Arakida, H.

AU - Machida, N.

AU - Yamamoto, H.

AU - Fujiyoshi, T.

AU - Matsumoto, Y.

AU - Yamagishi, O.

AU - Samata, T.

AU - Asano, A.

AU - Terazawa, T.

AU - Ohmori, K.

AU - Shirakura, J.

AU - Watanabe, Y.

AU - Nakamura, H.

AU - Minami, S.

AU - Kuroda, T.

AU - Furuyama, T.

PY - 2000

Y1 - 2000

N2 - The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.

AB - The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.

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JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

T2 - 2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC

Y2 - 7 February 2000 through 9 February 2000

ER -

A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

Abstract

ASJC Scopus subject areas

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