A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

T. Nishikawa, M. Takahashi, M. Hamada, T. Takayanagi, H. Arakida, N. Machida, H. Yamamoto, T. Fujiyoshi, Y. Matsumoto, O. Yamagishi, T. Samata, A. Asano, T. Terazawa, K. Ohmori, J. Shirakura, Y. Watanabe, H. Nakamura, S. Minami, T. Kuroda, T. Furuyama

Research output: Contribution to journalConference articlepeer-review

56 Citations (Scopus)


The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.

Original languageEnglish
Pages (from-to)230-231
Number of pages2
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States
Duration: 2000 Feb 72000 Feb 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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