TY - JOUR
T1 - A comparative study of the effects of sputtering deposition conditions for ZnO surface electrode layers on Cu(In,Ga)Se2 and CuGaSe2 solar cells
AU - Ishizuka, Shogo
AU - Fons, Paul J.
AU - Shibata, Hajime
N1 - Funding Information:
The authors would like to thank M. Iioka, H. Higuchi, A. Kurokawa, Y. Kamikawa, J. Nishinaga, and T. Koida for their help with the experiments and technical support. This work was supported in part by a National Institute of Advanced Industrial Science and Technology (AIST) internal fund, AIST Department of Energy and Environment Innovation Program.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - The effects of post p-n junction formation processes, namely transparent conducting oxide (TCO) layer deposition conditions on Cu(In,Ga)Se2 (CIGS) and CuGaSe2 (CGS) solar cell device properties were comparatively studied. It was found that CIGS devices were relatively insensitive to the presence of oxygen and heat during TCO layer deposition, whereas CGS devices were extremely sensitive to oxygen and heat, resulting in a degradation of device performance in the presence of them. The use of the relatively low TCO deposition temperature (Ts) of 80 °C led to significant improvements in the fill factor values of CGS devices compared to the case for Ts ~ 180 °C, though the open circuit voltage was reduced. These results suggest that TCO deposition conditions can be an important parameter which critically affects ternary CGS solar cell device properties. It is, therefore, suggested that TCO layer deposition conditions for CGS devices should be optimized independently of that for conventional narrow-gap CIGS devices.
AB - The effects of post p-n junction formation processes, namely transparent conducting oxide (TCO) layer deposition conditions on Cu(In,Ga)Se2 (CIGS) and CuGaSe2 (CGS) solar cell device properties were comparatively studied. It was found that CIGS devices were relatively insensitive to the presence of oxygen and heat during TCO layer deposition, whereas CGS devices were extremely sensitive to oxygen and heat, resulting in a degradation of device performance in the presence of them. The use of the relatively low TCO deposition temperature (Ts) of 80 °C led to significant improvements in the fill factor values of CGS devices compared to the case for Ts ~ 180 °C, though the open circuit voltage was reduced. These results suggest that TCO deposition conditions can be an important parameter which critically affects ternary CGS solar cell device properties. It is, therefore, suggested that TCO layer deposition conditions for CGS devices should be optimized independently of that for conventional narrow-gap CIGS devices.
KW - Copper gallium selenide
KW - Copper indium gallium selenide
KW - Interface
KW - Solar cells
KW - Wide-gap chalcopyrite
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U2 - 10.1016/j.tsf.2016.07.022
DO - 10.1016/j.tsf.2016.07.022
M3 - Article
AN - SCOPUS:84978910400
SN - 0040-6090
VL - 633
SP - 49
EP - 54
JO - Thin Solid Films
JF - Thin Solid Films
ER -