Abstract
A single-chip low-IF transmitter for the Bluetooth Enhanced Data Rate (max. 3Mbps) was fabricated in 0.18-μm CMOS process. A quantitative study on the relation between the VCO pulling, intermediate frequency, and the linearity of the PA shows that the IMHz-IF is the best solution. By a digital DC offset cancellation and I/Q mismatch trimming techniques, the LO and image signal leakages are suppressed below -40dBc and -50dBc, respectively.
Original language | English |
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Pages | 298-301 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Event | 2005 Symposium on VLSI Circuits - Kyoto, Japan Duration: 2005 Jun 16 → 2005 Jun 18 |
Other
Other | 2005 Symposium on VLSI Circuits |
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Country/Territory | Japan |
City | Kyoto |
Period | 05/6/16 → 05/6/18 |
Keywords
- Digital trimming
- I/Q mismatch
- Low-IF
- RF CMOS
- VCO pulling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering