TY - JOUR
T1 - A study of the crystalline growth of highly boron-doped CVD diamond
T2 - Preparation of graded-morphology diamond thin films
AU - Einaga, Yasuaki
AU - Kim, Gyu Sik
AU - Park, Soo Gil
AU - Fujishima, Akira
N1 - Funding Information:
We are grateful to Prof D.A. Tryk, The University of Tokyo, for reading the manuscript carefully and useful discussions. This work was supported by a Grant-in-Aid for Scientific Research on Priority Areas, Electrochemistry of Ordered Interfaces, from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2001/3
Y1 - 2001/3
N2 - An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.
AB - An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.
KW - Crystalline growth
KW - Graded-morphology
KW - Highly boron-doped diamond film
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U2 - 10.1016/S0925-9635(01)00375-2
DO - 10.1016/S0925-9635(01)00375-2
M3 - Article
AN - SCOPUS:0035270375
SN - 0925-9635
VL - 10
SP - 306
EP - 311
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 3-7
ER -