A theoretical study and realization of new spin quantum cross structure devices using organic materials

Kenji Kondo, Hideo Kaiju, Akira Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have proposed a spin quantum cross structure (SQCS) device as a candidate beyond CMOS. The SQCS device consists of two ferromagnetic metal thin films with their edges crossed, and sandwiches a few atoms or molecules. In this work, the spin dependent transport formula has been derived for SQCS devices with collinear ferromagnetic electrodes within the framework of the Anderson Hamiltonian. Also, the calculation of the magnetoresistance (MR) ratio has been done as a function of renormalized transfer matrices including magnetostriction effects and the other effects phenomenologically. It is shown that the MR ratio can be controlled by changing the renormalized coupling constants. The MR ratio is represented by a new formula. Also, we have realized an SQCS device with Ni magnetic thin-film electrodes, sandwiching poly (3-hexylthiophene) (P3HT): 6, 6-phenyl-C61-butyric acid methyl ester (PCBM) organic molecules between both the electrodes. The current-voltage characteristics of SQCS devices were measured by a four-terminal method and agree well with the theoretical results, quantitatively.

Original languageEnglish
Title of host publicationAdvanced Materials for Half-Metallic and Organic Spintronics
Number of pages6
Publication statusPublished - 2010 Oct 15
Externally publishedYes
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 2009 Nov 302009 Dec 4

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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