A trial for micro-scale evaluation of adhesion strength around Cu metallization systems

Shoji Kamiya, Hitoshi Arakawa, Hiroshi Shimomura, Masaki Omiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

Original languageEnglish
Title of host publicationMaterials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781558999503
Publication statusPublished - 2007 Jan 1
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 102007 Apr 12

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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