TY - JOUR
T1 - A triaxial tactile sensor without crosstalk using pairs of piezoresistive beams with sidewall doping
AU - Takahashi, Hidetoshi
AU - Nakai, Akihito
AU - Thanh-Vinh, Nguyen
AU - Matsumoto, Kiyoshi
AU - Shimoyama, Isao
N1 - Funding Information:
The photolithography masks were made using the University of Tokyo's VLSI Design and Education Center (VDEC)’s 8-inch EB writer F5112 + VD01, donated by the ADVANTEST Corporation. This research was partly supported by the Tateisi Science and Technology Foundation .
PY - 2013
Y1 - 2013
N2 - This paper reports on a triaxial tactile sensor using piezoresistive beams. The sensor chip is composed of two pairs of sidewall-doped Si beams for shear stress sensing and one pair of surface-doped Si beams for normal stress sensing. The sizes of the shear- and pressure-sensing beams are 180 μm × 15 μm × 20 μm and 250 μm × 50 μm × 20 μm (length × width × thickness), respectively. The sensor chip is embedded in a PDMS sheet 10 mm × 10 mm × 2 mm in size. Because the simple beam structure can be fabricated easily, the proposed sensor is compatible with semiconductor device fabrication. The fabricated sensor was evaluated for normal and shear stress (0-400 kPa and 0-100 kPa, respectively). The responses of the corresponding beam pairs were found to be proportional to the magnitude of the applied stresses without the influence of the other stresses. The relationship between the angle of shear stress and the responses of each beam pair was also evaluated. Each beam pair detects only one axis's shear stress and showed little reaction to the other axes' shear stress. As a result, the proposed sensor can measure the three axial components of normal and shear stress independently.
AB - This paper reports on a triaxial tactile sensor using piezoresistive beams. The sensor chip is composed of two pairs of sidewall-doped Si beams for shear stress sensing and one pair of surface-doped Si beams for normal stress sensing. The sizes of the shear- and pressure-sensing beams are 180 μm × 15 μm × 20 μm and 250 μm × 50 μm × 20 μm (length × width × thickness), respectively. The sensor chip is embedded in a PDMS sheet 10 mm × 10 mm × 2 mm in size. Because the simple beam structure can be fabricated easily, the proposed sensor is compatible with semiconductor device fabrication. The fabricated sensor was evaluated for normal and shear stress (0-400 kPa and 0-100 kPa, respectively). The responses of the corresponding beam pairs were found to be proportional to the magnitude of the applied stresses without the influence of the other stresses. The relationship between the angle of shear stress and the responses of each beam pair was also evaluated. Each beam pair detects only one axis's shear stress and showed little reaction to the other axes' shear stress. As a result, the proposed sensor can measure the three axial components of normal and shear stress independently.
KW - Piezoresistive
KW - Sidewall doping
KW - Tactile sensor
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U2 - 10.1016/j.sna.2013.05.002
DO - 10.1016/j.sna.2013.05.002
M3 - Article
AN - SCOPUS:84878857002
SN - 0924-4247
VL - 199
SP - 43
EP - 48
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
ER -