Adsorption states of dialkyl ditelluride autooxidized monolayers on Au(111)

Tohru Nakamura, Takayuki Miyamae, Ikuyo Nakai, Hiroshi Kondph, Tohru Kawamoto, Nobuhiko Kobayashi, Satoshi Yasuda, Daisuke Yoshimura, Toshiaki Ohta, Hisakazu Nozoye, Mutsuyoshi Matsumoto

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

Organic ditellurides (R2Te2 where R = n-butyl (C 4), n-octyl (C8), and n-cetyl (C16)) were synthesized, and their adsorption states after oxidation on Au(111) surfaces were studied by X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), theoretical analyses, near-edge X-ray absorption fine structure (NEXAFS) measurements, contact angle measurements, and atomic force microscopy (ATM). The obtained results show that dialkyl ditellurides form autooxidized monolayers (AMs) on the surfaces under ambient conditions and that the oxidation process is accelerated by ambient light. XPS, UPS, and theoretical analyses suggest that the autooxidized ditelluride species consist of polymers or oligomers with Te-O-Te-O network structures stabilized by oxygen bridges between tellurium molecules following the cleavage of tellurium-gold bonds. NEXAFS and contact angle measurements indicate that the average tilt angles of the alkyl chains from the surface normal are smaller for the AMs of dialkyl ditellurides having longer alkyl chains. AFM measurements show defects and roughness features around a few angstroms in height on the surfaces of the dialkyl ditelluride AMs.

Original languageEnglish
Pages (from-to)3344-3353
Number of pages10
JournalLangmuir
Volume21
Issue number8
DOIs
Publication statusPublished - 2005 Apr 12
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

Fingerprint

Dive into the research topics of 'Adsorption states of dialkyl ditelluride autooxidized monolayers on Au(111)'. Together they form a unique fingerprint.

Cite this