Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe; Naoto Ito; Yuji Awano

doi:10.23919/SISPAD.2017.8085320

Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe, Naoto Ito, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

Original language	English
Title of host publication	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	285-288
Number of pages	4
ISBN (Electronic)	9784863486102
DOIs	https://doi.org/10.23919/SISPAD.2017.8085320
Publication status	Published - 2017 Oct 25
Event	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan Duration: 2017 Sept 7 → 2017 Sept 9

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2017-September

Other

Other	2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
Country/Territory	Japan
City	Kamakura
Period	17/9/7 → 17/9/9

Keywords

Gallium Nitride (GaN)
High Electron Mobility Transistor (HEMT)
Monte Carlo
device simulation
electron transport
phonon transport

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.23919/SISPAD.2017.8085320

Cite this

Sawabe, R., Ito, N., & Awano, Y. (2017). Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (pp. 285-288). [8085320] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2017-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD.2017.8085320

Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. / Sawabe, Ryosuke; Ito, Naoto; Awano, Yuji.
2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 285-288 8085320 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2017-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sawabe, R, Ito, N & Awano, Y 2017, Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. in 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017., 8085320, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2017-September, Institute of Electrical and Electronics Engineers Inc., pp. 285-288, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, Kamakura, Japan, 17/9/7. https://doi.org/10.23919/SISPAD.2017.8085320

Sawabe R, Ito N, Awano Y. Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 285-288. 8085320. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD.2017.8085320

Sawabe, Ryosuke ; Ito, Naoto ; Awano, Yuji. / Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 285-288 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution",

abstract = "As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.",

keywords = "Gallium Nitride (GaN), High Electron Mobility Transistor (HEMT), Monte Carlo, device simulation, electron transport, phonon transport",

author = "Ryosuke Sawabe and Naoto Ito and Yuji Awano",

note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.; 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 ; Conference date: 07-09-2017 Through 09-09-2017",

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Y1 - 2017/10/25

N2 - As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

AB - As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

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Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

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