TY - JOUR
T1 - Ambipolar transistors based on chloro-substituted tetraphenylpentacene
AU - Sato, Ryonosuke
AU - Eda, Shohei
AU - Sugiyama, Haruki
AU - Uekusa, Hidehiro
AU - Hamura, Toshiyuki
AU - Mori, Takehiko
N1 - Funding Information:
We thank Dr H. Kojima (Nara Institute of Science and Technology) for the results in Fig. 3, which are taken from ref. 40. This work was partly supported by ACT-C Grant Number JPMJCR12YY and JPMJCR12ZB from JST, Japan, a Grant-in Aid for Scientific Research (No. 16K13974, 18H02044, 15H05840, 17K05745, and 18H04504) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan, and Takahashi Industrial and Economic Research Foundation. The authors are grateful to the Tokyo Institute of Technology Center for Advanced Materials Analysis for XRD measurements and Prof. Kakimoto for AFM measurements.
Publisher Copyright:
© 2019 The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.
AB - Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.
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U2 - 10.1039/c8tc06603e
DO - 10.1039/c8tc06603e
M3 - Article
AN - SCOPUS:85062871728
SN - 2050-7534
VL - 7
SP - 3294
EP - 3299
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 11
ER -