Abstract
An 11 Gb/s inductive-coupling link in 0.18μm CMOS demonstrates an energy efficiency of 1.4pJ/b and delivers a data rate 11× higher than previous inductive-coupling links. Communication distance is5× longer than a capacitive-coupling link for the same data rate, layout area, and BER. Burst transmission at 6.4Gb/s reduces layout area by a factor of three.
| Original language | English |
|---|---|
| Title of host publication | 2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 297-299 |
| Number of pages | 3 |
| ISBN (Print) | 9781424420100 |
| DOIs | |
| Publication status | Published - 2008 |
| Event | 2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States Duration: 2008 Feb 3 → 2008 Feb 7 |
Publication series
| Name | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
|---|---|
| Volume | 51 |
| ISSN (Print) | 0193-6530 |
Other
| Other | 2008 IEEE International Solid State Circuits Conference, ISSCC |
|---|---|
| Country/Territory | United States |
| City | San Francisco, CA |
| Period | 08/2/3 → 08/2/7 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 7 Affordable and Clean Energy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'An 11Gb/s inductive-coupling link with burst transmission'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS