An electrically driven, ultrahigh-speed, on-chip light emitter based on carbon nanotubes

Tatsuya Mori, Yohei Yamauchi, Satoshi Honda, Hideyuki Maki

Research output: Contribution to journalArticlepeer-review

63 Citations (Scopus)


The integration of high-speed light emitters on silicon chips is an important issue that must be resolved in order to realize on-chip or interchip optical interconnects. Here, we demonstrate the first electrically driven ultrafast carbon nanotube (CNT) light emitter based on blackbody radiation with a response speed (1-10 Gbps) that is more than 106 times higher than that of conventional incandescent emitters and is either higher than or comparable to that of light-emitting diodes or laser diodes. This high-speed response is explained by the extremely fast temperature response of the CNT film, which is dominated by the small heat capacity of the CNT film and its high heat dissipation to the substrate. Moreover, we experimentally demonstrate 140 ps width pulsed light generation and real-time optical communication. This CNT-based emitter with the advantages of ultrafast response speeds, a small footprint, and integration on silicon can enable novel architectures for optical interconnects, photonic, and optoelectronic integrated circuits.

Original languageEnglish
Pages (from-to)3277-3283
Number of pages7
JournalNano Letters
Issue number6
Publication statusPublished - 2014 Jun 11


  • Carbon nanotubes
  • blackbody radiation
  • high-speed light emitter
  • optical communication

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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