TY - JOUR
T1 - An EXAFS and XANES study of MBE grown Cu-doped ZnO
AU - Fons, P.
AU - Yamada, A.
AU - Iwata, K.
AU - Matsubara, K.
AU - Niki, S.
AU - Nakahara, K.
AU - Takasu, H.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - The wide bandgap semiconductor, ZnO, is intrinsically n-type and one of the remaining hurdles to be overcome before it can be used for optoelectronic applications is achieving p-type doping. A potential candidate for a p-type dopant is Cu. Towards this end, X-ray near-edge absorption (XANES) has been used to determine changes in valency of Cu in molecular beam epitaxial grown ZnO as a function of growth parameters. Growth parameters varied include the Cu flux which was varied over roughly three orders of magnitude TCu = 800-1000 °C and two substrate temperatures: 300 and 600 °C. XANES measurements confirmed that Cu was in the +1 valence state for all as-grown samples. Preliminary EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. X-ray diffraction also indicated significant phase separation with the presence of both metallic Cu and CuO indicated for Cu concentrations > 3×1021 cm-3.
AB - The wide bandgap semiconductor, ZnO, is intrinsically n-type and one of the remaining hurdles to be overcome before it can be used for optoelectronic applications is achieving p-type doping. A potential candidate for a p-type dopant is Cu. Towards this end, X-ray near-edge absorption (XANES) has been used to determine changes in valency of Cu in molecular beam epitaxial grown ZnO as a function of growth parameters. Growth parameters varied include the Cu flux which was varied over roughly three orders of magnitude TCu = 800-1000 °C and two substrate temperatures: 300 and 600 °C. XANES measurements confirmed that Cu was in the +1 valence state for all as-grown samples. Preliminary EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. X-ray diffraction also indicated significant phase separation with the presence of both metallic Cu and CuO indicated for Cu concentrations > 3×1021 cm-3.
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U2 - 10.1016/S0168-583X(02)01553-7
DO - 10.1016/S0168-583X(02)01553-7
M3 - Article
AN - SCOPUS:0037237997
SN - 0168-583X
VL - 199
SP - 190
EP - 194
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -