Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Chika Tanaka; Daisuke Hagishima; Ken Uchida; Toshinori Numata

doi:10.1016/j.sse.2013.04.022

Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Chika Tanaka, Daisuke Hagishima, Ken Uchida, Toshinori Numata

Research output: Contribution to journal › Article › peer-review

Abstract

Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

Original language	English
Pages (from-to)	27-31
Number of pages	5
Journal	Solid-State Electronics
Volume	86
DOIs	https://doi.org/10.1016/j.sse.2013.04.022
Publication status	Published - 2013

Keywords

Analytical model
Silicon nanowire transistor
Threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2013.04.022

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title = "Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors",

abstract = "Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.",

keywords = "Analytical model, Silicon nanowire transistor, Threshold voltage",

author = "Chika Tanaka and Daisuke Hagishima and Ken Uchida and Toshinori Numata",

note = "Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) as part of its Development of Nanoelectronic Device Technology project. ",

year = "2013",

doi = "10.1016/j.sse.2013.04.022",

language = "English",

volume = "86",

pages = "27--31",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

AU - Tanaka, Chika

AU - Hagishima, Daisuke

AU - Uchida, Ken

AU - Numata, Toshinori

N1 - Funding Information: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) as part of its Development of Nanoelectronic Device Technology project.

PY - 2013

Y1 - 2013

N2 - Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

AB - Device design for cylindrical Si nanowire field-effect-transistors is studied in short channel regime of 22 nm technology generations and beyond. A two-dimensional quasi-analytical model reveals that a critical minimum channel length is 1.5 times as long as a Si nanowire diameter to suppress the short channel effects. The quantum mechanical effect due to the structural carrier confinement in nanowire with narrow diameter deteriorates both the threshold voltage roll-offs and the subthreshold characteristics.

KW - Analytical model

KW - Silicon nanowire transistor

KW - Threshold voltage

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JO - Solid-State Electronics

JF - Solid-State Electronics

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Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors

Abstract

Keywords

ASJC Scopus subject areas

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