@article{6c8e23c9d17248c1aa5f3b96cb3023ec,
title = "Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography",
abstract = "We report comparison of the interfacial sharpness characterization of germanium (Ge) isotopic multilayers between laser-assisted atom probe tomography (APT) and secondary ion mass spectrometry (SIMS). An alternating stack of 8-nm-thick naturally available Ge layers and 8-nm-thick isotopically enriched 70Ge layers was prepared on a Ge(100) substrate by molecular beam epitaxy. The APT mass spectra consist of clearly resolved peaks of five stable Ge isotopes (70Ge, 72Ge, 73Ge, 74Ge, and 76Ge). The degree of intermixing at the interfaces between adjacent layers was determined by APT to be around 0.8 ± 0.1 nm which was much sharper than that obtained by SIMS.",
author = "Y. Shimizu and H. Takamizawa and Y. Kawamura and M. Uematsu and T. Toyama and K. Inoue and Haller, {E. E.} and Itoh, {K. M.} and Y. Nagai",
note = "Funding Information: Y.S. wishes to thank Dr. M. Tomita of Toshiba Corporation for fruitful discussions. The work at Tohoku University was supported in part by Grants-in-Aid for Scientific Research from MEXT (Grants Nos. 21246142 and 24760246) and STARC. The work at Keio University has been supported in part by the Grant-in-Aid for Scientific Research and Project for Developing Innovation Systems by MEXT, FIRST, and CREST–JST. The work at LBNL was supported in part by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract No. DE-AC02-05CH11231.",
year = "2013",
month = jan,
day = "14",
doi = "10.1063/1.4773675",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",
}