Atomically-controlled Fe3Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao; Yuichiro Ando; Koji Ueda; Kohei Hamaya; Yukio Nozaki; Taizoh Sadoh; Kimihide Matsuyama; Kazumasa Narumi; Yoshihito Maeda

doi:10.1109/ICSICT.2008.4734647

Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application

Masanobu Miyao, Yuichiro Ando, Koji Ueda, Kohei Hamaya, Yukio Nozaki, Taizoh Sadoh, Kimihide Matsuyama, Kazumasa Narumi, Yoshihito Maeda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe₃Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO₃-type Fe₃Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 10⁴. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe₃Si source/drain for spin-injection.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	688-691
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734647
Publication status	Published - 2008
Externally published	Yes
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	08/10/20 → 08/10/23

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ICSICT.2008.4734647

Cite this

Miyao, M., Ando, Y., Ueda, K., Hamaya, K., Nozaki, Y., Sadoh, T., Matsuyama, K., Narumi, K., & Maeda, Y. (2008). Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 688-691). Article 4734647 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734647

Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. / Miyao, Masanobu; Ando, Yuichiro; Ueda, Koji et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 688-691 4734647 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miyao, M, Ando, Y, Ueda, K, Hamaya, K, Nozaki, Y, Sadoh, T, Matsuyama, K, Narumi, K & Maeda, Y 2008, Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734647, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 688-691, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08/10/20. https://doi.org/10.1109/ICSICT.2008.4734647

Miyao M, Ando Y, Ueda K, Hamaya K, Nozaki Y, Sadoh T et al. Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 688-691. 4734647. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734647

Miyao, Masanobu ; Ando, Yuichiro ; Ueda, Koji et al. / Atomically-controlled Fe₃Si/Ge hybrid structures for group-IV-semiconductor spin-transistor application. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 688-691 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

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abstract = "Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.",

author = "Masanobu Miyao and Yuichiro Ando and Koji Ueda and Kohei Hamaya and Yukio Nozaki and Taizoh Sadoh and Kimihide Matsuyama and Kazumasa Narumi and Yoshihito Maeda",

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AU - Hamaya, Kohei

AU - Nozaki, Yukio

AU - Sadoh, Taizoh

AU - Matsuyama, Kimihide

AU - Narumi, Kazumasa

AU - Maeda, Yoshihito

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AB - Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:l) and growth temperature (130 °C), a high quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.

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