Band-edge photoluminescence of CuGaSe2 films grown by MBE

A. Yamada; Y. Makita; S. Niki; P. J. Fons; H. Shibata

Band-edge photoluminescence of CuGaSe₂ films grown by MBE

A. Yamada, Y. Makita, S. Niki, P. J. Fons, H. Shibata

Research output: Contribution to journal › Article › peer-review

Abstract

Slightly Cu-rich CuGaSe₂ films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71eV at low temperature. It is revealed to be a complex attributable to recombination of free excitons and that of bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2meV and 3.3meV, respectively. The band-gap energy, E_g, is estimated to be 1.7310eV at low temperature. It is suggested that the temperature variation of E_g is caused by interaction with phonons of 26meV which corresponds to the mean value of optical phonons.

Original language	English
Pages (from-to)	73-78
Number of pages	6
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	60
Issue number	3
Publication status	Published - 1996 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{b6161a70f2554b8ba4c5e1beabbf57ca,

title = "Band-edge photoluminescence of CuGaSe2 films grown by MBE",

abstract = "Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71eV at low temperature. It is revealed to be a complex attributable to recombination of free excitons and that of bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2meV and 3.3meV, respectively. The band-gap energy, Eg, is estimated to be 1.7310eV at low temperature. It is suggested that the temperature variation of Eg is caused by interaction with phonons of 26meV which corresponds to the mean value of optical phonons.",

author = "A. Yamada and Y. Makita and S. Niki and Fons, {P. J.} and H. Shibata",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "60",

pages = "73--78",

journal = "Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory",

issn = "0366-9092",

publisher = "Denshi Gijutsu Sogo Kenkyujo",

number = "3",

}

TY - JOUR

T1 - Band-edge photoluminescence of CuGaSe2 films grown by MBE

AU - Yamada, A.

AU - Makita, Y.

AU - Niki, S.

AU - Fons, P. J.

AU - Shibata, H.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71eV at low temperature. It is revealed to be a complex attributable to recombination of free excitons and that of bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2meV and 3.3meV, respectively. The band-gap energy, Eg, is estimated to be 1.7310eV at low temperature. It is suggested that the temperature variation of Eg is caused by interaction with phonons of 26meV which corresponds to the mean value of optical phonons.

AB - Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71eV at low temperature. It is revealed to be a complex attributable to recombination of free excitons and that of bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2meV and 3.3meV, respectively. The band-gap energy, Eg, is estimated to be 1.7310eV at low temperature. It is suggested that the temperature variation of Eg is caused by interaction with phonons of 26meV which corresponds to the mean value of optical phonons.

UR - http://www.scopus.com/inward/record.url?scp=0029710129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029710129&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029710129

SN - 0366-9092

VL - 60

SP - 73

EP - 78

JO - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

JF - Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory

IS - 3

ER -

Band-edge photoluminescence of CuGaSe₂ films grown by MBE

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this