Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy

Akimasa Yamada; Yunosuke Makita; Shigeru Niki; Akira Obara; Paul Fons; Hajime Shibata; Michihiro Kawai; Shigefusa Chichibu; Hisayuki Nakanishi

doi:10.1063/1.361800

Band-edge photoluminescence of CuGaSe₂ films grown by molecular beam epitaxy

Akimasa Yamada, Yunosuke Makita, Shigeru Niki, Akira Obara, Paul Fons, Hajime Shibata, Michihiro Kawai, Shigefusa Chichibu, Hisayuki Nakanishi

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Slightly Cu-rich CuGaSe₂ films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band-gap energy E_g is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of E_g is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe₂.

Original language	English
Pages (from-to)	4318-4322
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	8
DOIs	https://doi.org/10.1063/1.361800
Publication status	Published - 1996 Apr 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.361800

Cite this

@article{01897883571f430195de90b8b56c6bcf,

title = "Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy",

abstract = "Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band-gap energy Eg is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of Eg is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe2.",

author = "Akimasa Yamada and Yunosuke Makita and Shigeru Niki and Akira Obara and Paul Fons and Hajime Shibata and Michihiro Kawai and Shigefusa Chichibu and Hisayuki Nakanishi",

year = "1996",

month = apr,

day = "15",

doi = "10.1063/1.361800",

language = "English",

volume = "79",

pages = "4318--4322",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxy

AU - Yamada, Akimasa

AU - Makita, Yunosuke

AU - Niki, Shigeru

AU - Obara, Akira

AU - Fons, Paul

AU - Shibata, Hajime

AU - Kawai, Michihiro

AU - Chichibu, Shigefusa

AU - Nakanishi, Hisayuki

PY - 1996/4/15

Y1 - 1996/4/15

N2 - Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band-gap energy Eg is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of Eg is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe2.

AB - Slightly Cu-rich CuGaSe2 films were grown on [001] oriented GaAs substrates by molecular beam epitaxy. Photoluminescence of the films showed a remarkable emission peaked at 1.71 eV at low temperature, which is attributed to recombination of free excitons and bound excitons. The dissociation energy of free excitons and their localization energy to a center are found to be 16.2 and 3.3 meV, respectively. The band-gap energy Eg is estimated to be 1.7310 eV at low temperature. It is suggested that the temperature variation of Eg is dominated by interaction with phonons of 26 meV which corresponds to the mean energy of the optical phonons in CuGaSe2.

UR - http://www.scopus.com/inward/record.url?scp=0000926489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000926489&partnerID=8YFLogxK

U2 - 10.1063/1.361800

DO - 10.1063/1.361800

M3 - Article

AN - SCOPUS:0000926489

SN - 0021-8979

VL - 79

SP - 4318

EP - 4322

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Band-edge photoluminescence of CuGaSe₂ films grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this