Bandgap engineering of ZnO transparent conducting films

K. Matsubara; H. Tampo; A. Yamada; P. Fons; K. Iwata; K. Sakurai; S. Niki

doi:10.1557/proc-763-b7.2

Bandgap engineering of ZnO transparent conducting films

K. Matsubara, H. Tampo, A. Yamada, P. Fons, K. Iwata, K. Sakurai, S. Niki

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10^-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

Original language	English
Pages (from-to)	295-299
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	763
DOIs	https://doi.org/10.1557/proc-763-b7.2
Publication status	Published - 2003 Jan 1
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: 2003 Apr 22 → 2003 Apr 25

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-763-b7.2

Cite this

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title = "Bandgap engineering of ZnO transparent conducting films",

abstract = "Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.",

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T1 - Bandgap engineering of ZnO transparent conducting films

AU - Matsubara, K.

AU - Tampo, H.

AU - Yamada, A.

AU - Fons, P.

AU - Iwata, K.

AU - Sakurai, K.

AU - Niki, S.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

AB - Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Bandgap engineering of ZnO transparent conducting films

Abstract

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