Bandgap engineering of ZnO using Se

K. Iwata; P. Fons; A. Yamada; H. Shibata; K. Matsubara; K. Nakahara; H. Takasu; S. Niki

doi:10.1002/1521-3951(200201)229:2<887::AID-PSSB887>3.0.CO;2-G

Bandgap engineering of ZnO using Se

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, S. Niki

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We have grown the compound semiconductor ZnO_1-xSe_x by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO_1-xSe_x compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.

Original language	English
Pages (from-to)	887-890
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200201)229:2<887::AID-PSSB887>3.0.CO;2-G
Publication status	Published - 2002
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200201)229:2<887::AID-PSSB887>3.0.CO;2-G

Cite this

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AU - Iwata, K.

AU - Fons, P.

AU - Yamada, A.

AU - Shibata, H.

AU - Matsubara, K.

AU - Nakahara, K.

AU - Takasu, H.

AU - Niki, S.

PY - 2002

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AB - We have grown the compound semiconductor ZnO1-xSex by MBE. A decrease in bandgap energy with increasing Se composition x was observed and a large bowing parameter of 12.7 ± 1.6 eV was measured. This indicates the possibility of bandgap bowing in the ZnO1-xSex compound system and may open up new bandgap control techniques that allow bandgap changes to be made with small lattice mismatch.

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Bandgap engineering of ZnO using Se

Abstract

ASJC Scopus subject areas

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