Bandgap-Tuned CuInS₂/ZnS Core/Shell Quantum Dots for a Luminescent Downshifting Layer in a Crystalline Silicon Solar Module

CuInS₂ (CIS) quantum dots (QDs) were investigated as a luminescent downshifting (LDS) material that converts near-ultraviolet (UV) light to visible light and were applied to a single crystalline silicon (c-Si) solar module that has no spectral sensitivity in the near-UV region. The bandgap of the CIS/ZnS core/shell QDs was successfully adjusted to &tild;3 eV, which was adequate for the LDS layer in solar devices, by changing the molar ratio of Cu/In. CIS/ZnS/ZnS core/shell/shell QDs with 59.9% absolute photoluminescence (PL) quantum yield were prepared by the hot-injection method and embedded in ethylene-vinyl acetate copolymer (EVA) resin to fabricate QD@EVA films as the LDS layer. The PL intensity of the QD@EVA films under near-UV excitation monotonically increased with increasing QD concentration. The films were attached to a commercial single c-Si solar module. The advantages and drawbacks of the films were discussed based on the results of incident photon-to-electron conversion efficiency and current-voltage curve measurements.