Abstract
La0.7Sr0.3MnO3-δ (LSMO) films have a large temperature coefficient of resistance (TCR: defined as 1/R dR/dT) at near room temperature. Bi0.34La0.33Sr0.33MnO3-δ (BLSMO) film in which La in LSMO is substituted by Bi, was deposited at low temperature, 400°C, by a laser ablation method. The BLSMO film on the SiO2/Si (100) substrate is polycrystalline without any preferred orientations. The low-temperature deposition and the Bi substitution eliminate the Curie temperature of the BLSMO film, and raise its TCR. The film has a large TCR, more than 2%/K, in the wide temperature range of 10-150°C.
Original language | English |
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Pages (from-to) | L219-L221 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 3 A |
DOIs | |
Publication status | Published - 2001 Mar 1 |
Keywords
- Bi-substitution effect
- Laser ablation
- Temperature coefficient of resistance
- Uncooled infrared bolometer sensor
- X-ray diffraction
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)