Bidirectional single-electron counting and the fluctuation theorem

Y. Utsumi, D. S. Golubev, M. Marthaler, K. Saito, T. Fujisawa, Gerd Schön

Research output: Contribution to journalArticlepeer-review

90 Citations (Scopus)


We investigate the direction-resolved full counting statistics of single-electron tunneling through a double quantum-dot system and compare with predictions of the fluctuation theorem (FT) for Markovian stochastic processes. Experimental data obtained for GaAs/GaAlAs heterostructures appear to violate the FT. After analyzing various potential sources for the discrepancy we conclude that the nonequilibrium shot noise of the quantum point contact electrometer, which is used to study the transport, induces strong dot-level fluctuations which significantly influence the tunneling statistics. Taking these modifications into account we find consistency with the FT.

Original languageEnglish
Article number125331
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 2010 Mar 29
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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