TY - JOUR
T1 - Bifacial PERC Solar Cell Designs
T2 - Bulk and Rear Properties and Illumination Condition
AU - Sugiura, Takaya
AU - Matsumoto, Satoru
AU - Nakano, Nobuhiko
N1 - Funding Information:
Manuscript received May 6, 2020; revised June 24, 2020; accepted July 21, 2020. Date of publication August 17, 2020; date of current version October 21, 2020. This work was supported in part by the VLSI Design and Education Center (VDEC) and in part by the University of Tokyo in collaboration with Synopsys, Inc. (Corresponding author: Takaya Sugiura.) The authors are with the Department of Electronics and Electrical Engineering, Keio University, Yokohama, Kanagawa 223-8522, Japan (e-mail: takaya_sugiura@nak.elec.keio.ac.jp; nobeyama103@outlook.jp; nak@elec. keio.ac.jp).
Publisher Copyright:
© 2011-2012 IEEE.
PY - 2020/11
Y1 - 2020/11
N2 - We report on the evaluation of cell performances of the bifacial passivated emitter and rear cell (PERC) structures for both p- and n-type Cz-Si. We compared four conditions: Front-side illumination, with and without the rear metal contact, rear-side illumination, and double-side illumination. Furthermore, the effects of the rear contact area and the rear passivation surface recombination velocity (SRV) were evaluated. The numerical simulations were based on the experimental results of the p-type bifacial PERC performance, and we attempted to determine optimized cell designs for each condition. The results showed that the rear passivation SRV determined the bulk condition: An n-type bulk resistivity of 1 $\Omega$-cm and p-type bulk resistivity with BO-cluster deactivation of 0.5 $\Omega$-cm were suitable for a smaller and larger SRV, respectively.
AB - We report on the evaluation of cell performances of the bifacial passivated emitter and rear cell (PERC) structures for both p- and n-type Cz-Si. We compared four conditions: Front-side illumination, with and without the rear metal contact, rear-side illumination, and double-side illumination. Furthermore, the effects of the rear contact area and the rear passivation surface recombination velocity (SRV) were evaluated. The numerical simulations were based on the experimental results of the p-type bifacial PERC performance, and we attempted to determine optimized cell designs for each condition. The results showed that the rear passivation SRV determined the bulk condition: An n-type bulk resistivity of 1 $\Omega$-cm and p-type bulk resistivity with BO-cluster deactivation of 0.5 $\Omega$-cm were suitable for a smaller and larger SRV, respectively.
KW - Device simulation
KW - perc
KW - perc+
KW - solar cell
KW - technology computer-aided-design
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U2 - 10.1109/JPHOTOV.2020.3013987
DO - 10.1109/JPHOTOV.2020.3013987
M3 - Article
AN - SCOPUS:85094851220
SN - 2156-3381
VL - 10
SP - 1538
EP - 1544
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 6
M1 - 9169660
ER -