TY - GEN
T1 - Carbon nanotube CVD-growth technology for future ULSI interconnects (invited)
AU - Awano, Yuji
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The technological advancements of carbon nanotube (CNT) material technologies and the potential of metallic CNT vias for future ULSI interconnections were described. CNTs have ultra-high thermal conductivity, as high as that of diamond, and can solve the problem of heat removal in ULSIs. CNTs also offer the advantage of ballistic transport along the tube, which can be the solution to the high-resistance problem in scaled-down vias. It was found that the estimated current density of on nanotube reached about 2.0×108 A/cm2, which is two orders of magnitude higher than the current density for Cu.
AB - The technological advancements of carbon nanotube (CNT) material technologies and the potential of metallic CNT vias for future ULSI interconnections were described. CNTs have ultra-high thermal conductivity, as high as that of diamond, and can solve the problem of heat removal in ULSIs. CNTs also offer the advantage of ballistic transport along the tube, which can be the solution to the high-resistance problem in scaled-down vias. It was found that the estimated current density of on nanotube reached about 2.0×108 A/cm2, which is two orders of magnitude higher than the current density for Cu.
UR - http://www.scopus.com/inward/record.url?scp=23244461052&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:23244461052
SN - 4990247205
T3 - Digest of Papers - Microprocesses and Nanotechnology 2004
SP - 318
EP - 319
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
T2 - 2004 International Microprocesses and Nanotechnology Conference
Y2 - 26 October 2004 through 29 October 2004
ER -