Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Masahiro Horibe; Mizuhisa Nihei; Daiyu Kondo; Akio Kawabata; Yuji Awano

doi:10.1143/JJAP.44.5309

Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Masahiro Horibe, Mizuhisa Nihei, Daiyu Kondo, Akio Kawabata, Yuji Awano

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We succeeded in developing carbon nanotube (CNT) vias specifically adapted for the copper interconnect process used in ultra large-scale integrated circuits. The CNTs were grown selectively on titanium films using Co catalyst films. The use of tantalum enabled CNTs to be grown on Cu lines and prevented any increase in the sheet resistance of the Cu lines. A Cu wire/CNT via/Cu wire structure was fabricated and low resistance of the via was demonstrated. In addition, tests showed that a high current density of about 10⁶ A/cm² flowed into the CNT via for 125 hours.

Original language	English
Pages (from-to)	5309-5312
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	7 A
DOIs	https://doi.org/10.1143/JJAP.44.5309
Publication status	Published - 2005 Jul 8
Externally published	Yes

Keywords

Carbon nanotubes (CNTs)
Cu/CNTs hybrid interconnection
Tantalum barrier
Via

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.5309

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Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes. / Horibe, Masahiro; Nihei, Mizuhisa; Kondo, Daiyu et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 A, 08.07.2005, p. 5309-5312.

Research output: Contribution to journal › Article › peer-review

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AU - Awano, Yuji

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Carbon nanotube growth technologies using tantalum barrier layer for future ULSIs with Cu/Low-k interconnect processes

Abstract

Keywords

ASJC Scopus subject areas

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