Carbon nanotube via interconnects with large current carrying capacity

Mizuhisa Nihei; Akio Kawabata; Shintaro Sato; Tatsuhiro Nozue; Takashi Hyakushima; Masaaki Norimatsu; Tomo Murakami; Daiyu Kondo; Mari Ohfuti; Yuji Awano

doi:10.1109/ICSICT.2008.4734598

Carbon nanotube via interconnects with large current carrying capacity

Mizuhisa Nihei, Akio Kawabata, Shintaro Sato, Tatsuhiro Nozue, Takashi Hyakushima, Masaaki Norimatsu, Tomo Murakami, Daiyu Kondo, Mari Ohfuti, Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×10⁶ A/cm⁶ at 105 °C for 100 hours without any deterioration.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	541-543
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2008.4734598
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 2008 Oct 20 → 2008 Oct 23

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	08/10/20 → 08/10/23

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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10.1109/ICSICT.2008.4734598

Cite this

Nihei, M., Kawabata, A., Sato, S., Nozue, T., Hyakushima, T., Norimatsu, M., Murakami, T., Kondo, D., Ohfuti, M., & Awano, Y. (2008). Carbon nanotube via interconnects with large current carrying capacity. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 541-543). Article 4734598 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734598

Carbon nanotube via interconnects with large current carrying capacity. / Nihei, Mizuhisa; Kawabata, Akio; Sato, Shintaro et al.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 541-543 4734598 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nihei, M, Kawabata, A, Sato, S, Nozue, T, Hyakushima, T, Norimatsu, M, Murakami, T, Kondo, D, Ohfuti, M & Awano, Y 2008, Carbon nanotube via interconnects with large current carrying capacity. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734598, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 541-543, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 08/10/20. https://doi.org/10.1109/ICSICT.2008.4734598

Nihei M, Kawabata A, Sato S, Nozue T, Hyakushima T, Norimatsu M et al. Carbon nanotube via interconnects with large current carrying capacity. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 541-543. 4734598. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734598

@inproceedings{c24566c7e11f4aa2a588115e80e18475,

title = "Carbon nanotube via interconnects with large current carrying capacity",

abstract = "We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm6 at 105 °C for 100 hours without any deterioration.",

author = "Mizuhisa Nihei and Akio Kawabata and Shintaro Sato and Tatsuhiro Nozue and Takashi Hyakushima and Masaaki Norimatsu and Tomo Murakami and Daiyu Kondo and Mari Ohfuti and Yuji Awano",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2008.4734598",

language = "English",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "541--543",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

TY - GEN

T1 - Carbon nanotube via interconnects with large current carrying capacity

AU - Nihei, Mizuhisa

AU - Kawabata, Akio

AU - Sato, Shintaro

AU - Nozue, Tatsuhiro

AU - Hyakushima, Takashi

AU - Norimatsu, Masaaki

AU - Murakami, Tomo

AU - Kondo, Daiyu

AU - Ohfuti, Mari

AU - Awano, Yuji

PY - 2008/12/1

Y1 - 2008/12/1

N2 - We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm6 at 105 °C for 100 hours without any deterioration.

AB - We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures, which suggests that the carrier transport is ballistic. From the via height dependence of the resistance, the electron mean free path was estimated to be about 80 nm, which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm6 at 105 °C for 100 hours without any deterioration.

UR - http://www.scopus.com/inward/record.url?scp=60649120607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60649120607&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2008.4734598

DO - 10.1109/ICSICT.2008.4734598

M3 - Conference contribution

AN - SCOPUS:60649120607

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 541

EP - 543

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Carbon nanotube via interconnects with large current carrying capacity

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