Carbon nanotubes for VLSI: Interconnect and transistor applications

Y. Awano; S. Sato; M. Nihei; T. Sakai; Y. Ohno; T. Mizutani

doi:10.1109/VTSA.2011.5872210

Carbon nanotubes for VLSI: Interconnect and transistor applications

Y. Awano
, S. Sato
, M. Nihei
, T. Sakai
, Y. Ohno
, T. Mizutani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 10¹³/cm²) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	10-11
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872210
Publication status	Published - 2011 Jul 11
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan, Province of China Duration: 2011 Apr 25 → 2011 Apr 27

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	11/4/25 → 11/4/27

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2011.5872210

Cite this

Awano, Y., Sato, S., Nihei, M., Sakai, T., Ohno, Y., & Mizutani, T. (2011). Carbon nanotubes for VLSI: Interconnect and transistor applications. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 10-11). Article 5872210 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872210

Carbon nanotubes for VLSI: Interconnect and transistor applications. / Awano, Y.; Sato, S.; Nihei, M. et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 10-11 5872210 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Awano, Y, Sato, S, Nihei, M, Sakai, T, Ohno, Y & Mizutani, T 2011, Carbon nanotubes for VLSI: Interconnect and transistor applications. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872210, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 10-11, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, Province of China, 11/4/25. https://doi.org/10.1109/VTSA.2011.5872210

Awano Y, Sato S, Nihei M, Sakai T, Ohno Y, Mizutani T. Carbon nanotubes for VLSI: Interconnect and transistor applications. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 10-11. 5872210. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872210

@inproceedings{44ec6d11b2c6459296a0b3526686b6a8,

title = "Carbon nanotubes for VLSI: Interconnect and transistor applications",

abstract = "We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.",

author = "Y. Awano and S. Sato and M. Nihei and T. Sakai and Y. Ohno and T. Mizutani",

year = "2011",

month = jul,

day = "11",

doi = "10.1109/VTSA.2011.5872210",

language = "English",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "10--11",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

TY - GEN

T1 - Carbon nanotubes for VLSI

T2 - 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

AU - Awano, Y.

AU - Sato, S.

AU - Nihei, M.

AU - Sakai, T.

AU - Ohno, Y.

AU - Mizutani, T.

PY - 2011/7/11

Y1 - 2011/7/11

N2 - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

AB - We report the present status of Carbon Nanotube (CNT) CVD material technologies and their applications for via interconnects and FETs for VLSI. We succeeded in growing multi-walled CNTs (MWNTs) with the highest shell density (as high as 1013/cm2) and in fabricating via interconnects with high robustness against a high current density. We also report a Si-process compatible technique to control carrier polarity of Single-walled CNT (SWNT) FETs by utilizing fixed charges introduced by the gate oxide. High-performance p- and n-type CNT-FETs and CMOS inverters with stability in air have been realized.

UR - https://www.scopus.com/pages/publications/79960002985

UR - https://www.scopus.com/pages/publications/79960002985#tab=citedBy

U2 - 10.1109/VTSA.2011.5872210

DO - 10.1109/VTSA.2011.5872210

M3 - Conference contribution

AN - SCOPUS:79960002985

SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 10

EP - 11

BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

Y2 - 25 April 2011 through 27 April 2011

ER -

Carbon nanotubes for VLSI: Interconnect and transistor applications

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this