TY - GEN
T1 - Carrier-carrier interaction in a single InGaAs quantum dot at room temperature investigated by a near-field scanning optical microscope
AU - Matsuda, K.
AU - Ikeda, K.
AU - Saiki, T.
AU - Saito, Hideaki
AU - Nishi, Kenichi
N1 - Publisher Copyright:
© 2001 Optical Soc. Of America.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - Summary form only given. The improvement of the optical quality of semiconductor quantum dots (QDs) grown by Stranski-Krastanow mode is able to realize the QD based optical devices. Owing to the optimization of the growth condition, the performance of QD lasers is improved and becomes to exceed that of quanturn-well lasers. The homogeneous line-width affects the performance of the QD laser such as modulation characteristics and also contains the information on carrier-phonon interaction, carrier-carrier interaction and so on. In the operation of QD laser at room temperature, many carriers injected in and around the QD and the carrier-carrier interaction would lead to the substantial broadening of the linewidth. Employing a high sensitive near-field scanning optical microscope, we performed the single-QD PL spectroscopy at room temperature and discussed the carrier-carrier interaction through the excitation power dependent spectral shift and broadening.
AB - Summary form only given. The improvement of the optical quality of semiconductor quantum dots (QDs) grown by Stranski-Krastanow mode is able to realize the QD based optical devices. Owing to the optimization of the growth condition, the performance of QD lasers is improved and becomes to exceed that of quanturn-well lasers. The homogeneous line-width affects the performance of the QD laser such as modulation characteristics and also contains the information on carrier-phonon interaction, carrier-carrier interaction and so on. In the operation of QD laser at room temperature, many carriers injected in and around the QD and the carrier-carrier interaction would lead to the substantial broadening of the linewidth. Employing a high sensitive near-field scanning optical microscope, we performed the single-QD PL spectroscopy at room temperature and discussed the carrier-carrier interaction through the excitation power dependent spectral shift and broadening.
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U2 - 10.1109/QELS.2001.961886
DO - 10.1109/QELS.2001.961886
M3 - Conference contribution
AN - SCOPUS:84958238999
T3 - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
SP - 83
EP - 84
BT - Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Quantum Electronics and Laser Science Conference, QELS 2001
Y2 - 6 May 2001 through 11 May 2001
ER -