Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda; K. Ikeda; T. Saiki; H. Saito; K. Nishi

doi:10.1063/1.1609662

Carrier-carrier interaction in single In_0.5Ga_0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

K. Matsuda, K. Ikeda, T. Saiki, H. Saito, K. Nishi

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

A carrier-carrier interaction in self-assembled In_0.5Ga _0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.

Original language	English
Pages (from-to)	2250-2252
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	11
DOIs	https://doi.org/10.1063/1.1609662
Publication status	Published - 2003 Sept 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1609662

Cite this

@article{70212c53164248478a92ea917b51365d,

title = "Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope",

abstract = "A carrier-carrier interaction in self-assembled In0.5Ga 0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.",

author = "K. Matsuda and K. Ikeda and T. Saiki and H. Saito and K. Nishi",

year = "2003",

month = sep,

day = "15",

doi = "10.1063/1.1609662",

language = "English",

volume = "83",

pages = "2250--2252",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

AU - Matsuda, K.

AU - Ikeda, K.

AU - Saiki, T.

AU - Saito, H.

AU - Nishi, K.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - A carrier-carrier interaction in self-assembled In0.5Ga 0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.

AB - A carrier-carrier interaction in self-assembled In0.5Ga 0.5As quantum dots (QD) at room temperature was described. The spectral shift and linewidth broadening of ground state emission as a function of the excitation density were also investigated. The near-field single quantum dot photoluminescence spectroscopy was used.

UR - http://www.scopus.com/inward/record.url?scp=0142023875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142023875&partnerID=8YFLogxK

U2 - 10.1063/1.1609662

DO - 10.1063/1.1609662

M3 - Article

AN - SCOPUS:0142023875

SN - 0003-6951

VL - 83

SP - 2250

EP - 2252

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Carrier-carrier interaction in single In_0.5Ga_0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this