Carrier transport and stress engineering in ultrathin-body SOI MOSFETs

Ken Uchida

doi:10.1149/1.2355791

Carrier transport and stress engineering in ultrathin-body SOI MOSFETs

Ken Uchida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a comprehensive study on carrier transport in ultrathin-body (UTB) SOI MOSFETs. Phonon, roughness, and Coulomb scatterings in UTB MOSFETs are discussed. The single-gate and double-gate operations of UTB MOSFETs are compared. In addition, stress engineering in UTB MOSFETs is experimentally investigated using bending apparatus. copyright The Electrochemical Society.

Original language	English
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	27-32
Number of pages	6
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355791
Publication status	Published - 2006
Externally published	Yes
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2355791

Cite this

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title = "Carrier transport and stress engineering in ultrathin-body SOI MOSFETs",

abstract = "This paper presents a comprehensive study on carrier transport in ultrathin-body (UTB) SOI MOSFETs. Phonon, roughness, and Coulomb scatterings in UTB MOSFETs are discussed. The single-gate and double-gate operations of UTB MOSFETs are compared. In addition, stress engineering in UTB MOSFETs is experimentally investigated using bending apparatus. copyright The Electrochemical Society.",

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AB - This paper presents a comprehensive study on carrier transport in ultrathin-body (UTB) SOI MOSFETs. Phonon, roughness, and Coulomb scatterings in UTB MOSFETs are discussed. The single-gate and double-gate operations of UTB MOSFETs are compared. In addition, stress engineering in UTB MOSFETs is experimentally investigated using bending apparatus. copyright The Electrochemical Society.

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T2 - SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Carrier transport and stress engineering in ultrathin-body SOI MOSFETs

Abstract

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