Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

A. Klein; H. Dieker; B. Späth; P. Fons; A. Kolobov; C. Steimer; M. Wuttig

doi:10.1103/PhysRevLett.100.016402

Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

A. Klein, H. Dieker, B. Späth, P. Fons, A. Kolobov, C. Steimer, M. Wuttig

Research output: Contribution to journal › Article › peer-review

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Abstract

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

Original language	English
Article number	016402
Journal	Physical review letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.100.016402
Publication status	Published - 2008 Jan 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.100.016402

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abstract = "High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.",

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AU - Klein, A.

AU - Dieker, H.

AU - Späth, B.

AU - Fons, P.

AU - Kolobov, A.

AU - Steimer, C.

AU - Wuttig, M.

PY - 2008/1/10

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N2 - High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

AB - High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.

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Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

Abstract

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