Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant

Kei Noda, Yuki Hiruma, Yuji Yoshihashi, Masashi Uebe, Akihiro Ito

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.

Original languageEnglish
Pages (from-to)5296-5306
Number of pages11
JournalACS Applied Electronic Materials
Volume3
Issue number12
DOIs
Publication statusPublished - 2021 Dec 28

Keywords

  • benzimidazole derivative
  • electrochemical analysis
  • n-type doping
  • organic semiconductors
  • organic thin-film transistors
  • quantum chemical calculations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry

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