Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect transistor memories with silicon nanocrystal floating gates

Eiji Nagata, Nobuyoshi Takahashi, Yuri Yasuda, Takashi Inukai, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

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Physics & Astronomy

Engineering & Materials Science