Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

E. Nagata; N. Takahashi; Hiroki Ishikuro; T. Hiramoto

doi:10.1109/IMNC.1999.797489

Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

E. Nagata, N. Takahashi, Hiroki Ishikuro, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.

Original language	English
Title of host publication	1999 International Microprocesses and Nanotechnology Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	86-87
Number of pages	2
ISBN (Electronic)	4930813972, 9784930813978
DOIs	https://doi.org/10.1109/IMNC.1999.797489
Publication status	Published - 1999 Jan 1
Externally published	Yes
Event	1999 International Microprocesses and Nanotechnology Conference - Yokohama, Japan Duration: 1999 Jul 6 → 1999 Jul 8

Other

Other	1999 International Microprocesses and Nanotechnology Conference
Country/Territory	Japan
City	Yokohama
Period	99/7/6 → 99/7/8

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/IMNC.1999.797489

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Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates. / Nagata, E.; Takahashi, N.; Ishikuro, Hiroki et al.
1999 International Microprocesses and Nanotechnology Conference. Institute of Electrical and Electronics Engineers Inc., 1999. p. 86-87 797489.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nagata, E, Takahashi, N, Ishikuro, H & Hiramoto, T 1999, Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates. in 1999 International Microprocesses and Nanotechnology Conference., 797489, Institute of Electrical and Electronics Engineers Inc., pp. 86-87, 1999 International Microprocesses and Nanotechnology Conference, Yokohama, Japan, 99/7/6. https://doi.org/10.1109/IMNC.1999.797489

@inproceedings{8ef8182e03ec49f0af4d17fe60fa0ac3,

title = "Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates",

abstract = "MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.",

author = "E. Nagata and N. Takahashi and Hiroki Ishikuro and T. Hiramoto",

year = "1999",

month = jan,

day = "1",

doi = "10.1109/IMNC.1999.797489",

language = "English",

pages = "86--87",

booktitle = "1999 International Microprocesses and Nanotechnology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 International Microprocesses and Nanotechnology Conference ; Conference date: 06-07-1999 Through 08-07-1999",

}

TY - GEN

T1 - Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

AU - Nagata, E.

AU - Takahashi, N.

AU - Ishikuro, Hiroki

AU - Hiramoto, T.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.

AB - MOSFET memories with silicon nano-crystal floating gates have recently attracted much attention as future memory devices with low power consumption and high writing endurance. In order to obtain higher packing densities, the small dimension of memory devices is essential. It has been reported that the threshold voltage shift becomes larger as the channel width of MOSFET memory is narrower. However, it is easily speculated that as the channel width becomes narrower, the distribution of threshold voltage shift also becomes larger. In this paper, the width dependence of threshold voltage shift and its distribution is evaluated in narrow channel MOSFET memories with silicon nano-crystal floating gates. It is indicated that the precise control of silicon nano-crystal distribution is necessary for small memory devices.

UR - http://www.scopus.com/inward/record.url?scp=85043776907&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043776907&partnerID=8YFLogxK

U2 - 10.1109/IMNC.1999.797489

DO - 10.1109/IMNC.1999.797489

M3 - Conference contribution

AN - SCOPUS:85043776907

SP - 86

EP - 87

BT - 1999 International Microprocesses and Nanotechnology Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 International Microprocesses and Nanotechnology Conference

Y2 - 6 July 1999 through 8 July 1999

ER -

Characteristics distribution of narrow channel MOSFET memories with silicon nano-crystal floating gates

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