TY - JOUR
T1 - Characterization of alkyl monolayer covalently bonded to Si(111) and soft-landing of vanadium-benzene sandwich clusters onto the alkyl monolayer substrate
AU - Matsumoto, T.
AU - Nagaoka, S.
AU - Ikemoto, K.
AU - Mitsui, M.
AU - Ara, M.
AU - Tada, H.
AU - Nakajima, A.
PY - 2009/4
Y1 - 2009/4
N2 - A hexadecyl monolayer covalently attached to Si(111) surfaces (C 16-Si(111)) was prepared at 200 °C from 1-hexadecene. Formation of the monolayer was characterized by water contact angle measurement, attenuated total reflection infrared (ATR-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Gas phase synthesized vanadium (V)-benzene (Bz) 1:2 (VBz2) sandwich clusters were size-selectively deposited onto the C16-Si(111) substrate thus prepared and an oxidized Si substrate. Investigation of the resultant clusters was implemented by thermal desorption spectroscopy (TDS). About 30 K increase in threshold desorption temperature of the landed clusters was observed on going from the oxidized Si to the C16-Si(111) substrate, a result indicating that the clusters are more strongly bound to the C16-Si(111) than to the oxidized Si. This result was explained by the penetration of the landed clusters into the hexadecyl monolayer.
AB - A hexadecyl monolayer covalently attached to Si(111) surfaces (C 16-Si(111)) was prepared at 200 °C from 1-hexadecene. Formation of the monolayer was characterized by water contact angle measurement, attenuated total reflection infrared (ATR-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). Gas phase synthesized vanadium (V)-benzene (Bz) 1:2 (VBz2) sandwich clusters were size-selectively deposited onto the C16-Si(111) substrate thus prepared and an oxidized Si substrate. Investigation of the resultant clusters was implemented by thermal desorption spectroscopy (TDS). About 30 K increase in threshold desorption temperature of the landed clusters was observed on going from the oxidized Si to the C16-Si(111) substrate, a result indicating that the clusters are more strongly bound to the C16-Si(111) than to the oxidized Si. This result was explained by the penetration of the landed clusters into the hexadecyl monolayer.
UR - http://www.scopus.com/inward/record.url?scp=67349147875&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67349147875&partnerID=8YFLogxK
U2 - 10.1140/epjd/e2009-00069-9
DO - 10.1140/epjd/e2009-00069-9
M3 - Article
AN - SCOPUS:67349147875
SN - 1434-6060
VL - 52
SP - 99
EP - 102
JO - European Physical Journal D
JF - European Physical Journal D
IS - 1-3
ER -