Abstract
The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.
Original language | English |
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Pages (from-to) | 125-130 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 222 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2004 Jan 30 |
Keywords
- LaF
- Oxygen sensor
- XPS analysis
- XRD analysis
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films