Characterization of oxygen impurities in thermally evaporated LaF                          3                          thin films suitable for oxygen sensor

M. Vijayakumar; S. Selvasekarapandian; T. Gnanasekaran; Shinobu Fujihara; Shinnosuke Koji

doi:10.1016/j.apsusc.2003.08.002

Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor

M. Vijayakumar
, S. Selvasekarapandian
, T. Gnanasekaran
, Shinobu Fujihara
, Shinnosuke Koji

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF ₃ . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF ₃ film applied for the oxygen sensor.

Original language	English
Pages (from-to)	125-130
Number of pages	6
Journal	Applied Surface Science
Volume	222
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.002
Publication status	Published - 2004 Jan 30

Keywords

LaF
Oxygen sensor
XPS analysis
XRD analysis

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2003.08.002

Cite this

Vijayakumar, M., Selvasekarapandian, S., Gnanasekaran, T., Fujihara, S., & Koji, S. (2004). Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor Applied Surface Science, 222(1-4), 125-130. https://doi.org/10.1016/j.apsusc.2003.08.002

Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor . / Vijayakumar, M.; Selvasekarapandian, S.; Gnanasekaran, T. et al.
In: Applied Surface Science, Vol. 222, No. 1-4, 30.01.2004, p. 125-130.

Research output: Contribution to journal › Article › peer-review

Vijayakumar, M, Selvasekarapandian, S, Gnanasekaran, T, Fujihara, S & Koji, S 2004, ' Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor ', Applied Surface Science, vol. 222, no. 1-4, pp. 125-130. https://doi.org/10.1016/j.apsusc.2003.08.002

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abstract = " The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.",

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AU - Koji, Shinnosuke

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AB - The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

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