CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing

Ryota Katsumi, Yasutomo Ota, Takeyoshi Tajiri, Satoshi Iwamoto, Kaur Ranbir, Johann Peter Reithmaier, Mohamed Benyoucef, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report the hybrid integration of a telecom band InAs/InP quantum-dot (QD) single-photon source on a CMOS-processed Si photonics chip using transfer printing. The integration technique allows for the assembly of photonic components in a pick-and-place operation and therefore can introduce them on Si photonics chips after completing the entire CMOS-compatible fabrication processes. We demonstrate telecom single-photon generation from an InAs/InP QD integrated on Si and its coupling into a waveguide. We also demonstrate the integration of a QD on a fiber-pigtailed Si chip and single-photon output through the optical fiber, showing a novel pathway for modularizing solid-state quantum light sources.

Original languageEnglish
Article number012004
JournalApplied Physics Express
Volume16
Issue number1
DOIs
Publication statusPublished - 2023 Jan

Keywords

  • integrated quantum photonics
  • quantum dot
  • quantum emitter
  • silicon photonics
  • single photon
  • transfer printing

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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