Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration

Young Tae Lee; Hee Don Seo; Akihisa Kawamura; Tetsuhiro Yamada; Yoshinori Matsumoto; Makoto Ishida; Tetsuro Nakamura

Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration

Young Tae Lee, Hee Don Seo, Akihisa Kawamura, Tetsuhiro Yamada, Yoshinori Matsumoto, Makoto Ishida, Tetsuro Nakamura

Research output: Contribution to conference › Paper › peer-review

Abstract

In order to reduce the offset and its temperature drift of the piezoresistive pressure sensor by the different properties of the piezoresistors and the residual stress, a double Wheatstone-bridge pressure sensor was studied. Because a compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset components, reduction of the offset and its temperature drift was realized by the subtraction of the output of the two bridges. By this compensation method, the offset and its temperature drift were reduced more than 95%, respectively. The sensitivity of the fabricated pressure sensor was 11.7 mV/V kgf cm^-2 for 0.9 kgf cm^-2 full-scale pressure range.

Original language	English
Pages	570-573
Number of pages	4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden Duration: 1995 Jun 25 → 1995 Jun 29

Other

Other	Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
City	Stockholm, Sweden
Period	95/6/25 → 95/6/29

ASJC Scopus subject areas

Engineering(all)

Cite this

Lee, Y. T., Seo, H. D., Kawamura, A., Yamada, T., Matsumoto, Y., Ishida, M., & Nakamura, T. (1995). Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration. 570-573. Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden.

Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration. / Lee, Young Tae; Seo, Hee Don; Kawamura, Akihisa et al.
1995. 570-573 Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden.

Research output: Contribution to conference › Paper › peer-review

Lee, YT, Seo, HD, Kawamura, A, Yamada, T, Matsumoto, Y, Ishida, M & Nakamura, T 1995, 'Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration', Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden, 95/6/25 - 95/6/29 pp. 570-573.

Lee YT, Seo HD, Kawamura A, Yamada T, Matsumoto Y, Ishida M et al.. Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration. 1995. Paper presented at Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden.

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title = "Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration",

abstract = "In order to reduce the offset and its temperature drift of the piezoresistive pressure sensor by the different properties of the piezoresistors and the residual stress, a double Wheatstone-bridge pressure sensor was studied. Because a compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset components, reduction of the offset and its temperature drift was realized by the subtraction of the output of the two bridges. By this compensation method, the offset and its temperature drift were reduced more than 95%, respectively. The sensitivity of the fabricated pressure sensor was 11.7 mV/V kgf cm-2 for 0.9 kgf cm-2 full-scale pressure range.",

author = "Lee, {Young Tae} and Seo, {Hee Don} and Akihisa Kawamura and Tetsuhiro Yamada and Yoshinori Matsumoto and Makoto Ishida and Tetsuro Nakamura",

year = "1995",

language = "English",

pages = "570--573",

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T1 - Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration

AU - Lee, Young Tae

AU - Seo, Hee Don

AU - Kawamura, Akihisa

AU - Yamada, Tetsuhiro

AU - Matsumoto, Yoshinori

AU - Ishida, Makoto

AU - Nakamura, Tetsuro

PY - 1995

Y1 - 1995

N2 - In order to reduce the offset and its temperature drift of the piezoresistive pressure sensor by the different properties of the piezoresistors and the residual stress, a double Wheatstone-bridge pressure sensor was studied. Because a compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset components, reduction of the offset and its temperature drift was realized by the subtraction of the output of the two bridges. By this compensation method, the offset and its temperature drift were reduced more than 95%, respectively. The sensitivity of the fabricated pressure sensor was 11.7 mV/V kgf cm-2 for 0.9 kgf cm-2 full-scale pressure range.

AB - In order to reduce the offset and its temperature drift of the piezoresistive pressure sensor by the different properties of the piezoresistors and the residual stress, a double Wheatstone-bridge pressure sensor was studied. Because a compensation bridge was arranged near by the pressure sensitive bridge, which have the similar offset components, reduction of the offset and its temperature drift was realized by the subtraction of the output of the two bridges. By this compensation method, the offset and its temperature drift were reduced more than 95%, respectively. The sensitivity of the fabricated pressure sensor was 11.7 mV/V kgf cm-2 for 0.9 kgf cm-2 full-scale pressure range.

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T2 - Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)

Y2 - 25 June 1995 through 29 June 1995

ER -

Compensation method of offset and its temperature drift in silicon piezoresistive pressure sensor using double wheatstone-bridge configuration

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