@inproceedings{b8e5afb62bfb4c28803a364aad90a25f,
title = "Control of charging in high aspect ratio plasma etching of integrated circuits",
abstract = "In this paper we discuss some recent studies on control of charging during plasma etching of silicon dioxide in integrated circuits. These are required to reduce the damage on the devices and allow further increase in speed and capacity of integrated circuits. Such possibilities have a bearing in development of telecommunications. In particular we discuss how properties of incoming ions, geometry of the nanostructure, aspect ratio and plasma properties affect the kinetics of charging.",
keywords = "charging, integrated circuits, ion energy distribution, plasma etching",
author = "Petrovic, {Z. L.} and T. Makabe",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/TELSKS.2003.1246198",
language = "English",
isbn = "0780379632",
series = "6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings",
publisher = "IEEE Computer Society",
pages = "119--126",
booktitle = "6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 - Proceedings",
note = "6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, TELSIKS 2003 ; Conference date: 01-10-2003 Through 03-10-2003",
}