We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy