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Cryogenic Investigation of a 13 GHz Power Amplifier for Trapped-Ion Quantum Computer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents an in-depth investigation of the cryogenic applicability of a power amplifier (PA) from simulative and operative viewpoint. A method is introduced for gaining circuit simulation insight below the typical qualified Process Design Kit's (PDK) temperature range down to 4.5 K. Based on this performance-loss compensation at cryogenic temperature is discussed. The analysis is validated with measurements of a 13 GHz PA for 171Yb+ qubit gate control at 4.5 K and 300 K respectively. The PA under test is intended for a microwave-driven trapped-ion-based qubit system and is fabricated in a 0.13μm SiGe BiCMOS process.

Original languageEnglish
Title of host publication2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems, COMCAS 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350348187
DOIs
Publication statusPublished - 2024
Event2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems, COMCAS 2024 - Tel Aviv, Israel
Duration: 2024 Jul 92024 Jul 11

Publication series

Name2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems, COMCAS 2024

Conference

Conference2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems, COMCAS 2024
Country/TerritoryIsrael
CityTel Aviv
Period24/7/924/7/11

Keywords

  • BiCMOS
  • Cryogenic Operation
  • Qubit Control
  • Trapped Ion Microwave Control

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Biomedical Engineering
  • Electrical and Electronic Engineering
  • Instrumentation
  • Radiation

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